SnS compounds are potential candidates for the production of low cost solar conversion materials. They have recently attracted considerable attention because of their physical properties, which are suitable for optoelectronic device fabrication. Indium doped SnS thin films were fabricatedusing the spray pyrolysis technique and their structural,morphological and elemental analyses were analyzed by X-ray diffraction (XRD),scanning electron microscope (SEM) and energy dispersive analysis for X-ray (EDAX) respectively. The crystallite size of the pure SnS and indium doped SnS was calculated using the Debye Scherrer’s formula. XRD result reveals that the crystallite size of thin films was reduced with increasein the dopant concentration. The EDAX results confirm the presence of indiumin the thin films and its atomic percentage increases as the doping concentration was increased.