The effect of dopingSnO2thin films with Al and Zn concentration on the structural electrical optical properties of the films was studied. The undopedSnO2 thin films and Aluminium and Zinc Co doped SnO2thinfilms were prepared on glass substrates at 400ºC by spray Pyrolysistechnique. The starting material was (SnCl4.5H2O) and doping source was Aluminium Chloride and Zinc Chloride were used as a source for tin (Sn), Aluminium(Al) and Zinc(Zn) respectively. The source are dissolved in methanol and stirred at four hours in 50ºC. The starting doping stoichiometric ratio of 0.04.The resulting solution was sprayed on glass substrate to nozzle distance were maintained respectively at 10ml/min and 25cm. the prepared samples to studied for effect of Al, Zn doped SnO2 films on structural and optical properties of layers characterized by different method such as XRD,SEM, UV-Visible and EDAX. Their results show that the films have Nano-scale structure and it is suitable for gas sensors applications.